AN XPS STUDY OF SILICON NOBLE-METAL INTERFACES - BONDING TRENDS AND CORRELATIONS WITH THE SCHOTTKY-BARRIER HEIGHTS

被引：19

作者：

GRUNTHANER, PJ ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90666-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：831 / 833

页数：3

共 16 条

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[5] CHEMICAL BONDING AND CHARGE REDISTRIBUTION - VALENCE BAND AND CORE LEVEL CORRELATIONS FOR THE NI/SI, PD/SI, AND PT/SI SYSTEMS [J].

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[6] METAL-SILICON INTERFACE FORMATION - THE NI-SI AND PD-SI SYSTEMS [J].

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[7]

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[8]

GRUNTHANER PJ, UNPUB PHYS REV LETT

[9]

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