VERY HIGH TIN DOPING OF GA0.47IN0.53AS BY MOLECULAR-BEAM EPITAXY

The incorporation of Sn into Ga0.47In0.53As grown at 450°C by hydride source molecular beam epitaxy at concentrations ranging from about 3×1018 to 1×1021 Sn/cm3 has been investigated. Sn is a well behaved donor to about n=1020 cm-3, although increasing compensation is noted with increasing doping. At total concentrations beyond about 1020 cm -3 added Sn is not electrically active although the epitaxial quality remains high without noticeable morphology changes, defects, or precipitates, to at least 1021 Sn/cm3.