POTENTIAL BARRIER HEIGHT ANALYSIS OF ALGAINP MULTI-QUANTUM BARRIER (MQB)

被引:25
作者
TAKAGI, T
KOYAMA, F
IGA, K
机构
[1] Tokyo Institute of Technology, Midori-ku
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期
关键词
AIGalnP; Electron wave reflectivity; Multi-quantum barrier; Superlattice; Visible laser diode;
D O I
10.1143/JJAP.29.L1977
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have examined the electron wave reflectivities of the AlGalnP-based multi-quantum barrier (MQB) with changing of several parameters such as well and barrier thickness and pair number. We have optimized the MQB structure by clarifying several choices of the MQB parameters. Even in the 630-nm-range AIGalnP lasers, we can obtain effective potential barrier height 2 times greater than the classical potential barrier height U0 in the MQB composed of relatively nallow superlattices. The increased potential barrier height is about 114 meV and this suggests the possibility of higher-tempera-ture CW operation of 630-nm-range AIGalnP lasers. © 1990 IOP Publishing Ltd.
引用
收藏
页码:L1977 / L1980
页数:4
相关论文
共 14 条