YELLOW LIGHT (576NM) LASING EMISSION OF GAINP/ALLNP MULTIPLE QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE-MOLECULAR-BEAM-EPITAXY

被引：14

作者：

KANEKO, Y

KIKUCHI, A

NOMURA, I

KISHINO, K

机构：

[1] Department of Electrical and Electronic Engineering, Sophia University, Tokyo, 7-1 Kioi-cho

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 10期

关键词：

Epitaxy and epitaxial growth; Lasers and laser applications;

D O I：

10.1049/el:19900430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GalnP/AllnP MQW short-wavelength lasers with AHnP cladding layers were fabricated using a gas source molecular beam epitaxy (GSMBE) for the first time. The film thickness of the GalnP wells and AllnP barriers were 3 and 2nm, respectively. A yellow light lasing emission (576 nm) at 109 K was demonstrated by the MQW structure. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：657 / 658

页数：2

共 10 条

[1] SHORT-WAVELENGTH (LESS-THAN-OR-APPROXIMATELY-6400-A) ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N IN0.5(ALXGA1-X)0.5P QUANTUM WELL LASERS
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[6] ROOM-TEMPERATURE, CONTINUOUS-WAVE OPERATION FOR MODE-STABILIZED ALGAINP VISIBLE-LIGHT SEMICONDUCTOR-LASER WITH A MULTIQUANTUM-WELL ACTIVE LAYER
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[7] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A 640NM ALGAINP VISIBLE-LIGHT SEMICONDUCTOR-LASER
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[8] HIGH-OPTICAL-QUALITY GAINP AND GAINP AIINP DOUBLE HETEROSTRUCTURE LASERS GROWN ON GAAS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
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