ZNTE/ZNSTE DOPING SUPERLATTICES GROWN ON INP SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY

We demonstrate, for the first time, the properties of ZnTe/ZnSTe doping superlattices (SLs) grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE). The Sb impurity is selectively doped in the constituent ZnTe layers of the superlattice. The Sb-doped ZnTe layer grown by MOVPE shows the high hole concentration of 1 x 10(18) cm-3. The photoluminescence peak observed in the ZnTe/ZnSTe doping SL at 77 K shifts toward higher energy side as the excitation density of Ar laser increases. This result indicates that the dominant luminescence process is the recombination of electrons in the conduction bands with holes in the acceptor impurity band across the indirect gap in real space. The optical properties of the ZnTe/ZnSTe doping SL arising from an effective spatial separation of electrons and holes are very useful for new functional opto-electronic devices in visible region.