ION-BEAM CRYSTALLOGRAPHY OF SILICON SURFACES .1. SI(100)-(1X1)2H

被引:33
作者
TROMP, RM
SMEENK, RG
SARIS, FW
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D O I
10.1016/0039-6028(81)90120-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:13 / 25
页数:13
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共 31 条
[1]   ENERGY-SPECTRA AND CHARGE FRACTIONS FOR KEV HYDROGEN AND HELIUM BACKSCATTERED FROM SILICON [J].
AGAMY, SA ;
ROBINSON, JE .
SURFACE SCIENCE, 1979, 90 (02) :648-660
[2]  
[Anonymous], 1977, STOPPING RANGES IONS
[3]   THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].
APPELBAUM, JA ;
HAMANN, DR .
SURFACE SCIENCE, 1978, 74 (01) :21-33
[4]   MONTE CARLO CHANNELING CALCULATIONS [J].
BARRETT, JH .
PHYSICAL REVIEW B, 1971, 3 (05) :1527-&
[5]   VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON [J].
BATTERMAN, BW ;
CHIPMAN, DR .
PHYSICAL REVIEW, 1962, 127 (03) :690-&
[6]   DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACKSCATTERING MEASUREMENTS [J].
CEMBALI, F ;
ZIGNANI, F .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (03) :169-173
[7]   ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47
[8]  
DEMOND FJ, 1980, NUCL INSTRUM METHODS, V168, P69, DOI 10.1016/0029-554X(80)91233-1
[9]  
EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[10]   SI(001) SURFACE STUDIES USING HIGH-ENERGY ION-SCATTERING [J].
FELDMAN, LC ;
SILVERMAN, PJ ;
STENSGAARD, I .
NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :589-593