DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACKSCATTERING MEASUREMENTS

被引：23

作者：

CEMBALI, F ^{[1
]}

ZIGNANI, F ^{[1
]}

机构：

[1] CNR,CHIM & TECNOL MAT & COMPONENTI ELETTRONICA LAB,I-40126 BOLOGNA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1977年 / 31卷 / 03期

关键词：

D O I：

10.1080/00337577708233273

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：169 / 173

页数：5

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[3] DOPING AND RADIATION-DAMAGE PROFILES OF P+IONS IMPLANTED IN SILICON ALONG [110] AXIS [J].

CEMBALI, F ;

GALLONI, R ;

MOUSTY, F ;

ROSA, R ;

ZIGNANI, F .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04) :255-264

[4] ELECTRICAL ACTIVATION PROCESSES OF P+ IONS CHANNELED ALONG [110] AXIS OF SILICON - EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE [J].

CEMBALI, F ;

GALLONI, R ;

ZIGNANI, F .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (03) :161-171

[5]

DELLAMEA G, 1973, ATOMIC COLLISION SOL, V1, P75

[6]

DELLAMEA G, 1972, RADIAT EFF, V13, P115

[7]

LINDHARD J, 1953, KGL DAN VIDENSK SELK, V27

[8]

MELVIN JD, 1975, RADIAT EFF DEFECT S, V26, P113, DOI 10.1080/00337577508237428

[9]

WESTMORELAND JE, 1971, 1ST P INT C ION IMPL, P31

[10]

ZIEGLER JF, 1972, J APPL PHYS, V43

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