CADMIUM SULFIDE FIELD EFFECT PHOTOTRANSISTOR

被引：5

作者：

BOCKEMUEHL, RR

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1960年 / 48卷 / 05期

关键词：

D O I：

10.1109/JRPROC.1960.287624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：875 / 882

页数：8

共 10 条

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[3] UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

DACEY, GC ;

ROSS, IM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08) :970-979

[4] PHOTOELECTRONIC CIRCUIT APPLICATIONS [J].

GHANDHI, SK .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (01) :4-11

[5]

HERCZOG A, 1958, J ELECTROCHEM SOC, V105, P535

[6] THE STATUS OF TRANSISTOR RESEARCH IN COMPOUND SEMICONDUCTORS [J].

JENNY, DA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :959-968

[7]

PEARSON GL, 1953, PHYS REV, V90, P336

[8] PROPERTIES OF A CADMIUM SULFIDE PHOTORECTIFIER [J].

REYNOLDS, DC ;

GREENE, LC ;

ANTES, LL .

JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (06) :1177-1179

[9] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[10] A SEMICONDUCTOR CURRENT LIMITER [J].

WARNER, RM ;

JACKSON, WH ;

DOUCETTE, EI ;

STONE, HA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (01) :44-56

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