FABRICATION AND EMISSION CHARACTERISTICS OF POLYCRYSTALLINE SILICON FIELD EMITTERS

被引：12

作者：

HASHIGUCHI, G

MIMURA, H

FUJITA, H

机构：

[1] ATR,OPT & RADIO COMMUN RES LABS,KYOTO 61902,JAPAN

[2] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7B期

关键词：

FIELD EMITTER; MOLD; ANODIC BONDING; POLY-SI; ANISOTROPIC ETCHING;

D O I：

10.1143/JJAP.34.L883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A fabrication method and emission characteristics of polycrystalline silicon (poly-Si) gated field emitters have been presented, The fabrication combines mold emitter fabrication and anodic bonding techniques to transfer the emitters to a Pyrex glass substrate, The tantalum gated structures were fabricated by an etch-back technique using a photoresist process, and a gate opening of about 0.7 mu m has been successfully obtained. The emission characteristics of the fabricated poly-Si field emitters were also presented, showing high current drivability.

引用

页码：L883 / L885

页数：3

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