FORMATION OF SUB-MICRON SILICON-ON-INSULATOR STRUCTURES BY LATERAL OXIDATION OF SUBSTRATE-SILICON ISLANDS

被引:19
作者
ARNEY, SC [1 ]
MACDONALD, NC [1 ]
机构
[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期
关键词
D O I
10.1116/1.583993
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:341 / 345
页数:5
相关论文
共 13 条
[1]  
APPELS JA, 1970, PHILIPS RES REP, V25, P118
[2]  
APPELS JA, 1971, PHILIPS RES REP, V26, P157
[3]   TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].
BASSOUS, E ;
YU, HN ;
MANISCALCO, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737
[4]   DIELECTRIC ISOLATION - COMPREHENSIVE, CURRENT AND FUTURE [J].
BEAN, KE ;
RUNYAN, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) :C5-C12
[5]  
CHIU KY, 1982, IEEE T ELECTRON DEV, V29, P536, DOI 10.1109/T-ED.1982.20739
[6]   GRAPHITE-STRIP-HEATER ZONE-MELTING RECRYSTALLIZATION OF SI FILMS [J].
FAN, JCC ;
TSAUR, BY ;
GEIS, MW .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :453-483
[7]   FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS [J].
IMAI, K ;
UNNO, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :297-302
[8]  
JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401
[9]  
KUBOTA M, 1986, 1986 IEEE INT EL DEV, P814
[10]   THE OXIDATION OF SHAPED SILICON SURFACES [J].
MARCUS, RB ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1278-1282