TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2

[1] BASSOUS E, 1975, OCT EL SOC M DALL

[2] APPLICATION OF SILICON CRYSTAL ORIENTATION AND ANISOTROPIC EFFECTS TO CONTROL OF CHARGE SPREADING IN DEVICES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (03) : 111 - 117

[3] BEAN KE, 1974, OCT EL SOC M NEW YOR

[4] OPTIMIZATION OF HYDRAZINE-WATER SOLUTION FOR ANISOTROPIC ETCHING OF SILICON IN INTEGRATED-CIRCUIT TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (04) : 545 - 552

[5] DENNARD R, 1975, Patent No. 3899363

[6] EDWARDS R, 1973, SEMICONDUCTOR SILICO, P905

[7] OXIDE-ISOLATED MONOLITHIC TECHNOLOGY AND APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) : 373 - 380

[8] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 965 - &

[9] GOETZBER.A, 1966, AT&T TECH J, V45, P1097

[10] ETCHING VERY NARROW GROOVES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 195 - 198

[1] BASSOUS E, 1975, OCT EL SOC M DALL

[2] APPLICATION OF SILICON CRYSTAL ORIENTATION AND ANISOTROPIC EFFECTS TO CONTROL OF CHARGE SPREADING IN DEVICES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (03) : 111 - 117

[3] BEAN KE, 1974, OCT EL SOC M NEW YOR

[4] OPTIMIZATION OF HYDRAZINE-WATER SOLUTION FOR ANISOTROPIC ETCHING OF SILICON IN INTEGRATED-CIRCUIT TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (04) : 545 - 552

[5] DENNARD R, 1975, Patent No. 3899363

[6] EDWARDS R, 1973, SEMICONDUCTOR SILICO, P905

[7] OXIDE-ISOLATED MONOLITHIC TECHNOLOGY AND APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) : 373 - 380

[8] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 965 - &

[9] GOETZBER.A, 1966, AT&T TECH J, V45, P1097

[10] ETCHING VERY NARROW GROOVES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 195 - 198