GRAPHITE-STRIP-HEATER ZONE-MELTING RECRYSTALLIZATION OF SI FILMS

[1] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[2] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1848 - 1850

[3] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 150 - 152

[4] MICROZONE RECRYSTALLIZATION OF SEMICONDUCTOR COMPOUND FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 757 - &

[5] CHEN CK, 1983, UNPUB P HIGH SPEED G

[6] Fan J. C. C., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P751

[7] Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P218

[8] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[9] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[10] SINGLE-CRYSTAL SI FILMS ON SIO2 PREPARED BY USING A STATIONARY GRAPHITE HEATER FOR LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 308 - 310

[1] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[2] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1848 - 1850

[3] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 150 - 152

[4] MICROZONE RECRYSTALLIZATION OF SEMICONDUCTOR COMPOUND FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 757 - &

[5] CHEN CK, 1983, UNPUB P HIGH SPEED G

[6] Fan J. C. C., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P751

[7] Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P218

[8] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[9] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[10] SINGLE-CRYSTAL SI FILMS ON SIO2 PREPARED BY USING A STATIONARY GRAPHITE HEATER FOR LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 308 - 310