THE OXIDATION OF SHAPED SILICON SURFACES

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[2] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[3] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[4] SOME BASIC PROBLEMS OF THE FORMATION AND ADHERENCE OF SCALE ON IRON [J]. ACTA METALLURGICA, 1957, 5 (12): : 695 - 702

[5] GIRIFALCO LA, 1964, ATOMIC MIGRATION CRY, P131

[6] GROVE AS, 1967, PHYS TECHNOL S, P23

[7] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222

[8] HU SM, 1979, J APPL PHYS, V50, P4661, DOI 10.1063/1.326575

[9] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (08): : 2292 - &

[10] POLYSILICON SIO2 INTERFACE MICROTEXTURE AND DIELECTRIC-BREAKDOWN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1282 - 1289

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[2] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[3] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[4] SOME BASIC PROBLEMS OF THE FORMATION AND ADHERENCE OF SCALE ON IRON [J]. ACTA METALLURGICA, 1957, 5 (12): : 695 - 702

[5] GIRIFALCO LA, 1964, ATOMIC MIGRATION CRY, P131

[6] GROVE AS, 1967, PHYS TECHNOL S, P23

[7] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222

[8] HU SM, 1979, J APPL PHYS, V50, P4661, DOI 10.1063/1.326575

[9] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (08): : 2292 - &

[10] POLYSILICON SIO2 INTERFACE MICROTEXTURE AND DIELECTRIC-BREAKDOWN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1282 - 1289