POLYSILICON SIO2 INTERFACE MICROTEXTURE AND DIELECTRIC-BREAKDOWN

[1] ABBAS SA, 1975, 13TH ANN P REL PHYS, V13, P1

[2] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[3] ELECTRON-BEAM PROBE STUDIES OF SEMICONDUCTOR-INSULATOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 965 - 971

[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[5] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[6] HEIMANN P, UNPUB

[7] SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 705 - 713

[8] IRENE EA, 1978, MAR P INT C PHYS SIO, P205

[9] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (08): : 2292 - &

[10] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +

[1] ABBAS SA, 1975, 13TH ANN P REL PHYS, V13, P1

[2] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[3] ELECTRON-BEAM PROBE STUDIES OF SEMICONDUCTOR-INSULATOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 965 - 971

[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[5] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[6] HEIMANN P, UNPUB

[7] SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 705 - 713

[8] IRENE EA, 1978, MAR P INT C PHYS SIO, P205

[9] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (08): : 2292 - &

[10] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +