FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS

[1] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[2] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &

[3] IMAI K, 1979, JPN J APPL PHYS, V18, P281

[4] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[5] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[6] SHALLOW DONOR FORMATION IN SI PRODUCED BY PROTON BOMBARDMENT [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01): : 93 - 98

[7] PREUSS E, 1978, I PHYS C SER, V40, P7

[8] Tsaur B.-Y., 1981, International Electron Devices Meeting, P232

[1] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[2] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &

[3] IMAI K, 1979, JPN J APPL PHYS, V18, P281

[4] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[5] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[6] SHALLOW DONOR FORMATION IN SI PRODUCED BY PROTON BOMBARDMENT [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01): : 93 - 98

[7] PREUSS E, 1978, I PHYS C SER, V40, P7

[8] Tsaur B.-Y., 1981, International Electron Devices Meeting, P232