SHALLOW DONOR FORMATION IN SI PRODUCED BY PROTON BOMBARDMENT

被引：50

作者：

OHMURA, Y ^{[1
]}

ZOHTA, Y ^{[1
]}

KANAZAWA, M ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA R & D CTR,KAWASAKI,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 15卷 / 01期

关键词：

D O I：

10.1002/pssa.2210150110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：93 / 98

页数：6

相关论文

共 9 条

[1] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445
[2] THEORY OF INTERSTITIAL IMPURITY STATES IN SEMICONDUCTORS
KAUS, PE
[J]. PHYSICAL REVIEW, 1958, 109 (06): : 1944 - 1952
[3] ELECTRICAL PROPERTIES OF N-TYPE SI LAYERS DOPED WITH PROTON BOMBARDMENT INDUCED SHALLOW DONORS
OHMURA, Y
ZOHTA, Y
KANAZAWA, M
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (01) : 263 - &
[4] Pruniaux B.R., 1971, [No title captured], P212
[5] THEORY OF THE IONIZATION OF HYDROGEN AND LITHIUM IN SILICON AND GERMANIUM
REISS, H
[J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (04) : 681 - 686
[6] SHALLOW DONOR STATE PRODUCED BY PROTON BOMBARDMENT OF SILICON
ZOHTA, Y
OHMURA, Y
KANAZAWA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) : 532 - &
[7] A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS
ZOHTA, Y
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 284 - &
[8] DETERMINATION OF SPATIAL-DISTRIBUTION OF DEEP CENTERS FROM CAPACITANCE MEASUREMENTS OF PN JUNCTIONS
ZOHTA, Y
OHMURA, Y
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 117 - +
[9] [No title captured]