ELECTRICAL PROPERTIES OF N-TYPE SI LAYERS DOPED WITH PROTON BOMBARDMENT INDUCED SHALLOW DONORS

被引：77

作者：

OHMURA, Y

ZOHTA, Y

KANAZAWA, M

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 11卷 / 01期

关键词：

D O I：

10.1016/0038-1098(72)91173-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：263 / &

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