QUANTUM-WIRE MICROCAVITY LASER MADE FROM GAAS FRACTIONAL LAYER SUPERLATTICES

被引:22
作者
CHAVEZPIRSON, A
ANDO, H
SAITO, H
KANBE, H
机构
[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-01
关键词
D O I
10.1063/1.111799
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the first demonstration of lasing action in a quantum wire microcavity semiconductor laser made from an array of (AlAs)1/4(GaAs)3/4 fractional-layer superlattice (FLS) quantum wires. The FLS growth method produces uniform, densely packed, damage-free arrays of nanometer-size quantum wires which are integrated into an optical microcavity that is the size of the wavelength of the light. We obtain room temperature optically pumped lasing for wavelengths from 670 to 690 nm. The lasing output is linearly polarized parallel to the quantum wires, reflecting the higher optical gain for polarization direction parallel to the wires. The combination of a semiconductor quantum wire active material with an optical microcavity offers the possibility of ultimately compact, highly efficient laser sources.
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页码:1759 / 1761
页数:3
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