NANOMETER LITHOGRAPHY ON SILICON AND HYDROGENATED AMORPHOUS-SILICON WITH LOW-ENERGY ELECTRONS

被引：44

作者：

KRAMER, N ^{[1
]}

JORRITSMA, J ^{[1
]}

BIRK, H ^{[1
]}

SCHONENBERGER, C ^{[1
]}

机构：

[1] UNIV TWENTE, 7500 AE ENSCHEDE, NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.587858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The oxidation of a hydrogen-terminated Si surface can locally be induced with a scanning tunnelling microscope (STM) operating in air or with a beam of free electrons in a controlled oxygen environment. Here, the oxidation mechanism of both processes are studied and compared. The oxidation with the STM in air depends strongly on the applied tip-substrate voltage and writing speed, but is not proportional to the tunneling current. This is in contrast to the process with a beam of free electrons. The thickness of the electron beam induced oxide is studied as a function of electron energy, electron dose, and oxygen pressure.

引用

页码：805 / 811

页数：7