EXCITON MOTION UNDER AN EXTERNAL ELECTRIC-FIELD IN GAAS

被引:11
作者
AOKI, K
OKUYAMA, Y
KOBAYASHI, T
YAMAMOTO, K
机构
[1] Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, Rokko, Kobe
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 04期
关键词
D O I
10.1088/0022-3719/12/4/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The zero-phonon exciton line in GaAs has been investigated as a function of external electric field. The excitonic emission peak of the upper polariton branch shifted to higher photon energies when the external electric field was increased up to 20 V cm-1. Simultaneously, the electron temperature increased from 4.9K to 20K. Emission due to exciton-electron inelastic collision including lower polariton branch was also observed, showing the peak shift to lower photon energies. A model of the exciton motion and heating of the electron gas system has been proposed.
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页码:647 / 654
页数:8
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