HOT-ELECTRON DISTRIBUTION IN GAAS DERIVED FROM PHOTOLUMINESCENCE MEASUREMENTS WITH APPLIED ELECTRIC FIELD

被引：23

作者：

SOUTHGATE, PD

HALL, DS

DREEBEN, AB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.1660642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2868 / +

页数：1

共 31 条

[1] LOW-TEMPERATURE VELOCITY-FIELD CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE [J].

ACKET, GA ;

LAM, HT ;

HEINLE, W .

PHYSICS LETTERS A, 1969, A 29 (10) :596-&

[2]

[Anonymous], 1959, PROGR THEOR PHYS SUP

[3] ELECTRIC FIELD DEPENDENCE OF CARRIER TEMPERATURE IN SEMICONDUCTORS [J].

BAYNHAM, AC ;

BUTCHER, PN ;

FAWCETT, W ;

LOVELUCK, JM .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 92 (577P) :783-&

[4] ANISOTROPY OF THE ENERGY DISTRIBUTION FUNCTION OF HOT HOLES IN GERMANIUM [J].

BAYNHAM, AC ;

PAIGE, EGS .

PHYSICS LETTERS, 1963, 6 (01) :7-10

[5] COLLISION INTEGRALS FOR DISPLACED MAXWELLIAN DISTRIBUTIONS [J].

BLOTEKJA.K ;

LUNDE, EB .

PHYSICA STATUS SOLIDI, 1969, 35 (02) :581-+

[6] MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].

BOARDMAN, AD ;

FAWCETT, W ;

REES, HD .

SOLID STATE COMMUNICATIONS, 1968, 6 (05) :305-&

[7]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[8] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[9] HOLE VELOCITY IN P-GAAS [J].

DALAL, VL .

APPLIED PHYSICS LETTERS, 1970, 16 (12) :489-&

[10] ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B, 1970, 1 (08) :3358-&

← 1 2 3 4 →