BROAD-BAND TUNING (170 NM) OF INGAAS QUANTUM-WELL LASERS

被引：5

作者：

ENG, LE

MEHUYS, DG

MITTELSTEIN, M

YARIV, A

机构：

[1] Department of Applied Physics 128-95, California Institute of Technology, California, Pasadena

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 20期

关键词：

Semiconductor lasers; Tuning;

D O I：

10.1049/el:19901072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：1675 / 1677

页数：3

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