IONIZATION-ENHANCED DIFFUSION - ION-IMPLANTATION IN SEMICONDUCTORS

被引：13

作者：

BOURGOIN, J ^{[1
]}

PEAK, D ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY, PHYS DEPT, ALBANY, NY 12203 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 07期

关键词：

D O I：

10.1063/1.1662700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3022 / 3027

页数：6

相关论文

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[7] RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON
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[8] RANGE MEASUREMENTS IN ORIENTED TUNGSTEN SINGLE CRYSTALS .3. INFLUENCE OF TEMPERATURE ON MAXIMUM RANGE
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[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 573 - &
[9] ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT
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[10] DEARNALEY G, 1970, EUROPEAN C ION IMPLA

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