QUANTUM SIZE EFFECT OF EXCITONIC BAND-EDGE LUMINESCENCE IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

被引：28

作者：

FUKATSU, S ^{[1
]}

YOSHIDA, H ^{[1
]}

USAMI, N ^{[1
]}

FUJIWARA, A ^{[1
]}

TAKAHASHI, Y ^{[1
]}

SHIRAKI, Y ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO, FAC ENGN, DEPT APPL PHYS, BUNKYO KU, TOKYO 153, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9B期

关键词：

STRAINED SI1-XGEX/SI SINGLE QUANTUM WELL; QUANTUM SIZE EFFECT; BAND-EDGE PHOTOLUMINESCENCE; EXCITONIC TRANSITION; GAS-SOURCE SI MOLECULAR BEAM EPITAXY;

D O I：

10.1143/JJAP.31.L1319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained SiGe/Si single quantum well structures were successfully grown by gas-source molecular beam epitaxy using disilane and germane. Quantum confined excitonic transitions of band-edge states dominated low-temperature photoluminescence (PL) spectra. The temperature dependence of PL intensity was in agreement with type-I quantum well formation. The quantum size effect was evidenced in these structures by the fact that the transition energy increased with decreasing well width.

引用

页码：L1319 / L1321

页数：3

共 13 条

[1] PHOTOLUMINESCENCE OF HYDROGENATED SIMGEN SUPERLATTICES
ARBETENGELS, V
KALLEL, MA
WANG, KL
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1705 - 1707
[2] EXCITON BINDING-ENERGY IN QUANTUM WELLS
BASTARD, G
MENDEZ, EE
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1974 - 1979
[3] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE
GNUTZMAN.U
CLAUSECK.K
[J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14
[4] HOUGHTON DC, 1991, MATER RES SOC SYMP P, V220, P299, DOI 10.1557/PROC-220-299
[5] INTERSUBBAND ABSORPTION IN SI1-XGEX SI MULTIPLE QUANTUM-WELLS
KARUNASIRI, RPG
PARK, JS
MII, YJ
WANG, KL
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (24) : 2585 - 2587
[6] Pankove JI., 1975, OPTICAL PROCESSES SE
[7] ELECTROLUMINESCENCE FROM A PSEUDOMORPHIC SI0.8GE0.2 ALLOY
ROBBINS, DJ
CALCOTT, P
LEONG, WY
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1350 - 1352
[8] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE FROM SI1-XGEX ALLOYS
ROWELL, NL
NOEL, JP
HOUGHTON, DC
BUCHANAN, M
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 957 - 958
[9] WELL-RESOLVED BAND-EDGE PHOTOLUMINESCENCE OF EXCITONS CONFINED IN STRAINED SI1-XGEX QUANTUM-WELLS
STURM, JC
MANOHARAN, H
LENCHYSHYN, LC
THEWALT, MLW
ROWELL, NL
NOEL, JP
HOUGHTON, DC
[J]. PHYSICAL REVIEW LETTERS, 1991, 66 (10) : 1362 - 1365
[10] STURM JC, 1991, MATER RES SOC SYMP P, V220, P341, DOI 10.1557/PROC-220-341

← 1 2 →