THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE

被引：245

作者：

GNUTZMAN.U ^{[1
]}

CLAUSECK.K ^{[1
]}

机构：

[1] AEG TELEFUNKEN,FORSCH INST,D-7900 ULM,WEST GERMANY

来源：

APPLIED PHYSICS | 1974年 / 3卷 / 01期

关键词：

D O I：

10.1007/BF00892328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9 / 14

页数：6

共 10 条

[1] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V5, P174
[2] BARDEEN J, 1957, PHOTOCONDUCTIVITY CO
[3] BLANKESLEE AE, 1970, IBM J RES DEVELOP, V14, P686
[4] GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (11) : 467 - &
[5] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
TSU, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &
[6] KAZARINOV RF, 1971, SOV PHYS SEMICOND+, V5, P707
[7] KAZARINOV RF, 1971, SOV PHYS SEMICOND+, V5, P710
[8] ELECTRICAL TRANSPORT PROPERTIES IN A SUPERLATTICE
LEBWOHL, PA
TSU, R
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2664 - &
[9] TSU R, 1970, APPL PHYS LETT, V19, P246
[10] SOLUTION GROWN GA1-XALXAS SUPERLATTICE STRUCTURES
WOODALL, JM
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 12 (01) : 32 - +