MOLECULAR-BEAM EPITAXIAL-GROWTH OF SUPERCONDUCTING BA2DYCU3O6.5 THIN-FILMS AT 420-DEGREES-C USING NO2 AS AN OXIDANT

被引:15
作者
NORIMOTO, K [1 ]
SEKINE, R [1 ]
MORI, M [1 ]
HANADA, T [1 ]
KUDO, M [1 ]
KAWAI, M [1 ]
机构
[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN
关键词
D O I
10.1063/1.108333
中图分类号
O59 [应用物理学];
学科分类号
摘要
A superconducting Ba2DyCu3O6.5 (orthorhombic II phase) thin film is formed on a MgO(100) substrate at 420-degrees-C by molecular beam epitaxial growth using NO2 as an oxidant. Metal elements Ba, Dy, and Cu are sequentially supplied from K cells onto MgO(100) at 420-degrees-C under a flow of 5 X 10(-5) Pa of NO2. The film gradually cooled in situ under the identical pressure of NO2 shows metallic behavior in the normal state and a T(c(zero)) of 50 K. The lattice constant of the c axis is observed at 11.75 angstrom, which is known as an orthorhombic II phase of bulk Ba2DyCu3O6.5. Due to the slow deposition rate, the film thus formed is oriented with the c axis perpendicular to the surface in spite of the low-temperature growth condition.
引用
收藏
页码:1971 / 1973
页数:3
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