ATOMIC LAYER BY ATOMIC LAYER GROWTH OF DYBACUO SUPERCONDUCTING THIN-FILMS BY MOLECULAR-BEAM EPITAXY

被引:25
作者
SCHUHL, A [1 ]
CABANEL, R [1 ]
LEQUIEN, S [1 ]
GHYSELEN, B [1 ]
TYC, S [1 ]
CREUZET, G [1 ]
SIEJKA, J [1 ]
机构
[1] UNIV PARIS 07,PHYS SOLIDES GRP,F-75251 PARIS,FRANCE
关键词
D O I
10.1063/1.103430
中图分类号
O59 [应用物理学];
学科分类号
摘要
Superconducting thin films of DyBaCuO have been achieved by molecular beam epitaxy. The films are strongly oriented with the c axis perpendicular to the substrate, and currently reach R=0 between 70 and 80 K. Critical temperatures (R=0) up to 50 K were obtained on 150-Å-thick films deposited atomic layer by atomic layer. These films present a flat surface as observed by high-energy electron diffraction. We show that in this process, a nominal 1:2:3 composition is not sufficient for the obtention of flat superconducting film. A good accuracy in the number of atoms deposited for each atomic layer is required.
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页码:819 / 821
页数:3
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