PREVENTION OF BASE DOPANT OUT-DIFFUSION USING A HETEROSTRUCTURE-EMITTER IN GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：7

作者：

YANG, YF ^{[1
]}

HSU, CC ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] CHINESE UNIV HONG KONG,DEPT ELECTR ENGN,SHA TIN,HONG KONG

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 03期

关键词：

D O I：

10.1088/0268-1242/10/3/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTS) grown by MOCVD were fabricated. Characteristics of HBTS with an undoped spacer layer and an n-type GaAs set-back layer (heterostructure-emitter) between base and emitter were investigated. The results show that the base dopant out-diffusion was effectively prevented in heterostructure-emitter bipolar transistors (HEBTS). In addition, a current gain of 100 at the collector current density of 1 x 10(-2) A cm(-2) and an offset voltage of 57 mV were obtained for Zn-doped HEBTS. In comparison with carbon-doped HBTS, HEBTS offer a higher current gain at a low current level, a smaller offset voltage and better uniformity in characteristics across the wafer.

引用

页码：339 / 343

页数：5