DIRECT EXPERIMENTAL-EVIDENCE FOR TRAP-STATE MEDIATED EXCITATION OF ER3+ IN SILICON

被引：42

作者：

SHIN, JH

VANDENHOVEN, GN

POLMAN, A

机构：

[1] FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.114634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time evolution of the 1.54 mu m Er3+ photoluminescence intensity of Er-doped silicon following a 30 mu s excitation pulse is investigated. It is found that at 9 K, the 1.54 mu m luminescence from Er3+ continues to increase up to 50 mu s after the pulse is terminated, when excess photocarriers no longer exist. This provides the first direct experimental evidence that a state in the forbidden gap of silicon acts as the gateway to the excitation of Er3+. Further analysis indicates recombination of bound excitons to be the most likely excitation mechanism. (C) 1995 American Institute of Physics.

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页码：377 / 379

页数：3

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