OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY

被引：159

作者：

JELLISON, GE

MODINE, FA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.331113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3745 / 3753

页数：9

相关论文

共 33 条

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &
[2] Aspnes D. E., 1973, Optics Communications, V8, P222, DOI 10.1016/0030-4018(73)90132-6
[3] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
THEETEN, JB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1359 - 1365
[4] HIGH PRECISION SCANNING ELLIPSOMETER
ASPNES, DE
STUDNA, AA
[J]. APPLIED OPTICS, 1975, 14 (01): : 220 - 228
[5] OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
THEETEN, JB
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (14) : 1046 - 1050
[6] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ
[7] WAVELENGTH-SCANNING POLARIZATION-MODULATION ELLIPSOMETRY - SOME PRACTICAL CONSIDERATIONS
BERMUDEZ, VM
RITZ, VH
[J]. APPLIED OPTICS, 1978, 17 (04) : 542 - 552
[8] EFFECT OF SAMPLE IMPERFECTIONS IN WAVELENGTH-SCANNING POLARIZATION-MODULATION ELLIPSOMETRY
BERMUDEZ, VM
[J]. OPTICS COMMUNICATIONS, 1977, 23 (03) : 413 - 418
[9] ELLIPS - FORTRAN SIMULATION OF A POLARIZATION-MODULATION ELLIPSOMETER
BERMUDEZ, VM
[J]. COMPUTER PHYSICS COMMUNICATIONS, 1977, 13 (03) : 207 - 224
[10] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
BRAUNSTEIN, R
MOORE, AR
HERMAN, F
[J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

← 1 2 3 4 →