SOME ASPECTS OF GUNN OSCILLATIONS IN THIN DIELECTRIC-LOADED SAMPLES

被引:8
作者
HOFMANN, KR
机构
[1] Philips Research Laboratories NV Philips, Gloeilampenfabrieken, Eindhoven
[2] Institute of Physical Electronics, Technical University, Vienna
关键词
D O I
10.1049/el:19690172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The presence of a dielectric (dielectric plus metal) on the surface of a thin GaAs layer not only influences the growth of a space-charge wave, but also, depending on the configuration used, can produce a strongly inhomogeneous d.c. field distribution along the sample, inhibiting the usual domain oscillation pattern. © 1969, The Institution of Electrical Engineers. All rights reserved.
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页码:227 / &
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