SOME ASPECTS OF GUNN OSCILLATIONS IN THIN DIELECTRIC-LOADED SAMPLES

被引：8

作者：

HOFMANN, KR

机构：

[1] Philips Research Laboratories NV Philips, Gloeilampenfabrieken, Eindhoven

[2] Institute of Physical Electronics, Technical University, Vienna

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 11期

关键词：

D O I：

10.1049/el:19690172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The presence of a dielectric (dielectric plus metal) on the surface of a thin GaAs layer not only influences the growth of a space-charge wave, but also, depending on the configuration used, can produce a strongly inhomogeneous d.c. field distribution along the sample, inhibiting the usual domain oscillation pattern. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：227 / &

共 4 条

[1] SUPPRESSION OF TRAVELLING HIGH-FIELD-DOMAIN MODE OSCILLATIONS IN GAAS BY DIELECTRIC SURFACE LOADING
KATAOKA, S
TATENO, H
KAWASHIM.M
[J]. ELECTRONICS LETTERS, 1969, 5 (03) : 48 - &
[2] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES
KINO, GS
ROBSON, PN
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2056 - +
[3] SUPPRESSION OF GUNN OSCILLATIONS BY A 2-DIMENSIONAL EFFECT
KUMABE, K
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (12): : 2172 - +
[4] REDUCED BUILD-UP OF DOMAINS IN SHEET-TYPE GALLIUM-ARSENIDE GUNN OSCILLATORS
VLAARDINGERBROEK, MT
ACKET, GA
HOFMANN, K
BOERS, PM
[J]. PHYSICS LETTERS A, 1968, A 28 (02) : 97 - +

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