Analysis and modelling of plasma enhanced CVD reactors. Part I: two-dimensional treatment of a-Si:H deposition

被引：22

作者：

Layeillon, L. ^{[1
]}

Duverneuil, P. ^{[1
]}

Couderc, J. P. ^{[1
]}

Despax, B. ^{[2
]}

机构：

[1] ENSIGC, CNRS, URA 196, Lab Genie Chim, F-31078 Toulouse, France

[2] Univ Toulouse 3, CNRS, URA 304, Lab Genie Elect, F-31062 Toulouse, France

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1994年 / 3卷 / 01期

关键词：

D O I：

10.1088/0963-0252/3/1/008

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

To limit to a minimum the number of a priori hypotheses in the development of a numerical model of a-Si: H deposition plasma reactors from silane, a two-dimensional treatment of transport phenomena and chemical reactions has been selected and coupled to a one-dimensional treatment of electron-molecule interactions. The results have been compared with a set of experimental data giving the deposition rate profile as well as the gas phase composition in the exit stream. While the agreement is satisfactory for the deposition rate, some discrepancies between calculated and experimental gas concentrations call for additional investigations.

引用

页码：61 / 71

页数：11

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