MIGRATION ENERGY OF QUENCHED-IN DEFECT IN GERMANIUM

被引:5
作者
HASHIMOTO, F
KAMIURA, Y
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D O I
10.1143/JPSJ.33.271
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:271 / +
页数:1
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共 8 条
[1]  
HASIMOTO F, 1972, J PHYS SOC JPN, V32, P865
[3]  
KONOROVA LF, 1969, FIZ TVERD TELA+, V10, P2233
[4]   PERTURBATION-THEORY OF COVALENT CRYSTALS .3. CALCULATION OF FORMATION AND MIGRATION ENERGIES OF A VACANCY IN SI AND GE [J].
SOMA, T ;
MORITA, A .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (02) :357-+
[5]   DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY [J].
WATKINS, GD ;
CORBETT, JW .
PHYSICAL REVIEW, 1965, 138 (2A) :A543-+
[6]  
WATKINS GD, 1962, P INT C CRYSTAL LATT
[7]   INVESTIGATIONS OF OXYGEN-DEFECT INTERACTIONS BETWEEN 25 AND 700 DEGREES K IN IRRADIATED GERMANIUM [J].
WHAN, RE .
PHYSICAL REVIEW, 1965, 140 (2A) :A690-&
[8]  
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