CU(200) FILMS ON SI(100) - SIMULATION AND EXPERIMENT

被引：1

作者：

MORS, PM

TREIN, PE

SCHREINER, WH

机构：

[1] Instituto de Fìsica, UFRGS, 91501-970 Porto Alegre, RS

来源：

THIN SOLID FILMS | 1993年 / 224卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90449-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial deposition of Cu on Si(100) is obtained with deposition rates up to 30 angstrom s-1. A simple Monte Carlo simulation qualitatively reproduces the results. It is seen that the deposition rates employed in the usual experiments may be lower than the ideal values for obtaining the best epitaxial results.

引用

页码：4 / 6

页数：3

共 6 条

[1] FORMATION OF COPPER SILICIDES FROM CU(100)/SI(100) AND CU(111)/SI(111) STRUCTURES [J].