EPITAXY

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] [Anonymous], 1977, SEMICONDUCTOR LASERS

[3] [Anonymous], 1978, HETEROSTRUCTURE LASE

[4] GA-GAP-GAAS TERNARY PHASE DIAGRAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 700 - &

[5] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[6] GALLIUM ARSENIDE SURFACE STRUCTURE AND REACTION KINETICS - FIELD EMISSION MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3057 - &

[7] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[8] ARTHUR JR, 1968, J APPL PHYS, V39, P4030

[9] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[10] BACHRACH RZ, 1980, CRYSTAL GROWTH, P221

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] [Anonymous], 1977, SEMICONDUCTOR LASERS

[3] [Anonymous], 1978, HETEROSTRUCTURE LASE

[4] GA-GAP-GAAS TERNARY PHASE DIAGRAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 700 - &

[5] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[6] GALLIUM ARSENIDE SURFACE STRUCTURE AND REACTION KINETICS - FIELD EMISSION MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3057 - &

[7] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[8] ARTHUR JR, 1968, J APPL PHYS, V39, P4030

[9] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[10] BACHRACH RZ, 1980, CRYSTAL GROWTH, P221