ELECTRONIC-STRUCTURE OF DENSE AMORPHOUS-CARBON

被引:52
作者
LEE, CH
LAMBRECHT, WRL
SEGALL, B
KELIRES, PC
FRAUENHEIM, T
STEPHAN, U
机构
[1] CASE WESTERN RESERVE UNIV,DEPT PHYS,CLEVELAND,OH 44106
[2] UNIV CRETE,DEPT PHYS,GR-71110 IRAKLION,GREECE
[3] TECH UNIV CHEMNITZ ZWICKAU,DEPT PHYS,D-09009 CHEMNITZ,GERMANY
[4] RES CTR CRETE,GR-71110 IRAKLION,GREECE
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 16期
关键词
D O I
10.1103/PhysRevB.49.11448
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The tight-binding method is used to calculate the electronic densities of states of various models of a-C. Both models generated using Tersoff's potential and quantum mechanically derived forces show pi and pi* states in the sigma gap in agreement with experimental data. The former models, however, have an additional large peak at the Fermi level, which is shown to derive mainly from misoriented p(pi) orbitals and dangling bonds. The models do not support the presence of large aromatic ring structures. We find that embedding the local ir electron systems of small clusters in the rigid sp3 network leads to reduced level splittings and is thus consistent with the observed small optical gaps less-than-or-equal-to 2.5 eV.
引用
收藏
页码:11448 / 11451
页数:4
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