RANGES OF THE 0.3-2 MEV H+ AND 0.7-2 MEV H2+ IONS IN SI AND GE

被引:7
作者
BISTER, M
HIRVONEN, J
RAISANEN, J
ANTTILA, A
机构
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 59卷 / 3-4期
关键词
D O I
10.1080/00337578208237503
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
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页码:199 / 202
页数:4
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