INVESTIGATION OF HOT-CARRIER RELAXATION IN QUANTUM-WELL AND BULK GAAS AT HIGH CARRIER DENSITIES

被引：9

作者：

PELOUCH, WS ^{[1
]}

ELLINGSON, RJ ^{[1
]}

POWERS, PE ^{[1
]}

TANG, CL ^{[1
]}

SZMYD, DM ^{[1
]}

NOZIK, AJ ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation of the hot carrier relaxation in GaAs/(AlGa)As quantum wells and bulk GaAs in the high carrier density limit is presented. Using a time-resolved luminescence up-conversion technique with less-than-or-equal-to 80 fs temporal resolution, carrier temperatures are measured in the 100 fs to 2 ns range. Our results show that hot carrier cooling in quantum wells becomes significantly slower than in the bulk for carrier densities greater than 2 x 10(18) cm-3.

引用

页码：B337 / B339

页数：3

共 19 条

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