MOSSBAUER ISOMER-SHIFT AND THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS

被引：4

作者：

ANTONCIK, E

GU, BL

机构：

来源：

PHYSICA SCRIPTA | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1088/0031-8949/25/6A/046

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：835 / 836

页数：2

共 11 条

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[6] SIMPLIFIED IMPURITY CALCULATION [J].

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[8]

Shenoy G.F., 1978, MOSSBAUER ISOMER SHI

[9] SITE-SELECTIVE DOPING OF COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION OF RADIOACTIVE NUCLEI [J].

WEYER, G ;

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NIELSEN, HL ;

HEINEMEIER, J .

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[10]

Weyer G., 1975, Hyperfine Interactions, V1, P93, DOI 10.1007/BF01022445

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