PARALLEL QUANTUM POINT CONTACTS FABRICATED WITH INDEPENDENTLY BIASED GATES AND A SUBMICROMETER AIRBRIDGE POST

被引：12

作者：

SHERWIN, ME

SIMMONS, JA

EILES, TE

HARFF, NE

KLEM, JF

机构：

[1] Center for Compound Semiconductor Technology, Sandia National Laboratories, Albuquerque

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using an integrated airbridge and submicrometer gate post technology, coupled quantum point contacts (QPCs) arranged in a parallel configuration were fabricated. The airbridge and gate post are fabricated by e-beam lithography and Ti/Au evaporation in a single step. Gate post diameters as small as 0.1 mu m have been achieved. The two QPCs are fabricated with two conventional gates and a central airbridged gate, each of which can be biased independently. Conductance measurements clearly exhibit coupling of the two QPCs, as the quantized conductance steps are in units of 4 e(2)/h. Independent measurements of each QPC show conductance steps in units of 2 e(2)/h.

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页码：2326 / 2328

页数：3

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