CORRELATION BETWEEN BREAKDOWN AND PROCESS-INDUCED POSITIVE CHARGE TRAPPING IN THIN THERMAL SIO2

被引：57

作者：

HOLLAND, S

HU, C

机构：

[1] Univ of California, Berkeley, CA,, USA, Univ of California, Berkeley, CA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2108999

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1705 / 1712

页数：8

共 28 条

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