AUGER-ELECTRON-SPECTROSCOPY (AES) MEASUREMENTS ON ANODICALLY OXIDIZED LAYERS OF SINGLE-CRYSTAL GAP

被引：5

作者：

OKADA, A ^{[1
]}

OHNUKI, Y ^{[1
]}

INADA, T ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,KOGANEI CITY,TOKYO 184,JAPAN

来源：

关键词：

D O I：

10.1063/1.90373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：447 / 449

页数：3

共 5 条

[1]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[2] XPS ANALYSIS OF THERMALLY GROWN OXIDE FILM ON GAP [J].

NISHITANI, R ;

IWASAKI, H ;

MIZOKAWA, Y ;

NAKAMURA, S .

[3] ELECTRON-BEAM EFFECTS DURING OXYGEN-ADSORPTION [J].

NORMAN, D ;

SKINNER, DK .

[4]

OKADA A, 1978, J APPL PHYS, V49, P4496

[5] AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES [J].

SHIOTA, I ;

MIYAMOTO, N ;

NISHIZAWA, J .