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MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED-LASER ANNEALING BY TIME-DEPENDENT OPTICAL REFLECTIVITY
被引:31
作者
:
MURAKAMI, K
论文数:
0
引用数:
0
h-index:
0
MURAKAMI, K
TAKITA, K
论文数:
0
引用数:
0
h-index:
0
TAKITA, K
MASUDA, K
论文数:
0
引用数:
0
h-index:
0
MASUDA, K
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1981年
/ 20卷
/ 12期
关键词
:
D O I
:
10.1143/JJAP.20.L867
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L867 / L870
页数:4
相关论文
共 7 条
[1]
TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
论文数:
0
引用数:
0
h-index:
0
AUSTON, DH
SURKO, CM
论文数:
0
引用数:
0
h-index:
0
SURKO, CM
VENKATESAN, TNC
论文数:
0
引用数:
0
h-index:
0
VENKATESAN, TNC
SLUSHER, RE
论文数:
0
引用数:
0
h-index:
0
SLUSHER, RE
GOLOVCHENKO, JA
论文数:
0
引用数:
0
h-index:
0
GOLOVCHENKO, JA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(05)
: 437
-
440
[2]
MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
RIMINI, E
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 788
-
797
[3]
COMPAAN A, 1981, 1980 P MRS M LAS EL, P15
[4]
DYNAMIC BEHAVIOR OF MODE-LOCKED ND-YAG LASER ANNEALING IN ION-IMPLANTED SI, GAAS, AND GAP
论文数:
引用数:
h-index:
机构:
MURAKAMI, K
GAMO, K
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
GAMO, K
NAMBA, S
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
NAMBA, S
KAWABE, M
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
KAWABE, M
AOYAGI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
AOYAGI, Y
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(08)
: 628
-
630
[5]
MURAKAMI K, 1979, PHYS LETT A, V70, P437
[6]
VANVECHTEN JA, I PHYS C SER, V59, P473
[7]
WOLF HF, 1969, SILICON SEMICONDUCTO, P100
←
1
→
共 7 条
[1]
TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
论文数:
0
引用数:
0
h-index:
0
AUSTON, DH
SURKO, CM
论文数:
0
引用数:
0
h-index:
0
SURKO, CM
VENKATESAN, TNC
论文数:
0
引用数:
0
h-index:
0
VENKATESAN, TNC
SLUSHER, RE
论文数:
0
引用数:
0
h-index:
0
SLUSHER, RE
GOLOVCHENKO, JA
论文数:
0
引用数:
0
h-index:
0
GOLOVCHENKO, JA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(05)
: 437
-
440
[2]
MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
RIMINI, E
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 788
-
797
[3]
COMPAAN A, 1981, 1980 P MRS M LAS EL, P15
[4]
DYNAMIC BEHAVIOR OF MODE-LOCKED ND-YAG LASER ANNEALING IN ION-IMPLANTED SI, GAAS, AND GAP
论文数:
引用数:
h-index:
机构:
MURAKAMI, K
GAMO, K
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
GAMO, K
NAMBA, S
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
NAMBA, S
KAWABE, M
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
KAWABE, M
AOYAGI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
AOYAGI, Y
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(08)
: 628
-
630
[5]
MURAKAMI K, 1979, PHYS LETT A, V70, P437
[6]
VANVECHTEN JA, I PHYS C SER, V59, P473
[7]
WOLF HF, 1969, SILICON SEMICONDUCTO, P100
←
1
→