COMMENT ON ELECTRONIC-STRUCTURE OF NEUTRAL VACANCY IN SILICON

被引：26

作者：

KAUFFER, E ^{[1
]}

PECHEUR, P ^{[1
]}

GERL, M ^{[1
]}

机构：

[1] UNIV NANCY 1,CNRS,PHYS SOLIDES LAB 155,F-54037 NANCY,FRANCE

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.15.4107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4107 / 4108

页数：2

共 7 条

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JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (20) :2845-&

[3]

HERMAN F, 1967, INT J QUANTUM CHEM, V1, P533

[4] CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON [J].

KAUFFER, E ;

PECHEUR, P ;

GERL, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12) :2319-2330

[5] SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS [J].

LOUIE, SG ;

SCHLUTER, M ;

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 13 (04) :1654-1663

[6] REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111) [J].

PANDEY, KC ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1974, 32 (25) :1433-1436

[7]

WATKINS GD, 1975, 23 LATT DEF SEM COND, P7

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