ELECTRICAL AND STRUCTURAL-PROPERTIES OF EPITAXIALLY GROWN Y1BA2CU3O7-X AND Y2BA4CU8O16-X THIN-FILMS USING THE BAF2 METHOD

被引：5

作者：

MOSKE, M

DINA, S

VONMINNIGERODE, G

SAMWER, K

机构：

[1] IBM CORP,RES LABS,YORKTOWN HTS,NY

[2] UNIV AUGSBURG,INST PHYS,W-8900 AUGSBURG,GERMANY

来源：

PHYSICA C | 1990年 / 170卷 / 5-6期

关键词：

D O I：

10.1016/0921-4534(90)90021-6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Cu, Y and BaF2 are co-condensed in ultrahigh vacuum onto SrTiO3 (1 0 0)-substrates at room temperature without any additional oxygen supply. It is found that the temperature of the ex situ fluorine-oxygen exchange reaction in flowing wet oxygen essentially determines whether the Y1Ba2Cu3O7 - x-phase (Tex = 850°C) or the Y2Ba4Cu8O16 - x-phase (Tex = 800°C) forms or any mixture of both phases in between. Small-angle X-ray diffraction verifies the strictly epitaxial growth of the superconducting phases. The variation of the composition around the ideal 1,2,3-stoichiometry affects only the superconducting and normal conducting properties which are measured using the four-probe Montgomery method. The values of the normal state resistivity and its temperature dependence are discussed in combination with a reduced cross section of the conduction paths in the films. © 1990.

引用

页码：491 / 499

页数：9

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