GROWTH-KINETICS AND CRITICAL-TEMPERATURE MEASUREMENTS IN MOMBE GROWTH OF GAAS WITH TMGA BY RHEED

被引：14

作者：

KANEKO, T ^{[1
]}

NAJI, O ^{[1
]}

JONES, TS ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2AY,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90791-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The decomposition process of trimethylgallium (TMGa) during the MOMBE growth of GaAs with As4 has been studied from the behaviour of the growth rate and critical temperature measurements using RHEED intensity oscillations. Our results conclusively demonstrate the importance of surface As sites and the nature of the step edges in determining the decomposition of TMGa, as well as a greater anisotropy in the critical temperature compared to MBE growth using elemental Ga and MOMBE growth using triethylgallium (TEGa).

引用

页码：1059 / 1063

页数：5

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