PYROLYSIS OF TRIMETHYLGALLIUM ON GAAS(100) SURFACES

被引：79

作者：

MEMMERT, U

YU, ML

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 19期

关键词：

D O I：

10.1063/1.103224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used a combination of pulsed molecular beam and time-resolved mass spectrometry to study the kinetics of the pyrolysis of trimethylgallium on GaAs(100) surfaces. We found that CH3 is the major reaction product. Two CH3 desorption channels were observed, with activation energies 37.9±1.6 and 45.0±1.4 kcal/mole. An arsine ambient significantly accelerates the CH3 desorption, but no CH4 was observed. A model for the reaction of trimethylgallium on the GaAs(100) surface is proposed.

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页码：1883 / 1885

页数：3

相关论文

共 11 条

[1] DIRECT OBSERVATION OF GAAS ATOMIC LAYER EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

CHIU, TH .

APPLIED PHYSICS LETTERS, 1989, 55 (12) :1244-1246

[2]

CREIGHTON JR, 1989, 36TH NAT S AM VAC SO

[3] COMPACT PULSED MOLECULAR-BEAM SYSTEM FOR REAL-TIME REACTIVE SCATTERING FROM SOLID-SURFACES [J].

ELDRIDGE, BN ;

YU, ML .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (06) :1014-1026

[4] PYROLYSIS OF TRIMETHYL GALLIUM [J].

JACKO, MG ;

PRICE, SJW .

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06) :1560-&

[5] DEPOSITION MECHANISM OF GAAS EPITAXY [J].

NISHIZAWA, J ;

KURABAYASHI, T ;

ABE, H ;

SAKURAI, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) :945-951

[6] GROWTH KINETIC-STUDY IN GAAS MOLECULAR LAYER EPITAXY IN TMG/ASH3 SYSTEM [J].

NISHIZAWA, J ;

KURABAYASHI, T .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :98-107

[7] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J].

REEP, DH ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :675-680

[8]

SQUIRE DW, 1985, LASER I AM P ICALEO, V49, P148

[9] LEED, AES AND PHOTOEMISSION MEASUREMENTS OF EPITAXIALLY GROWN GAAS(001), (111)A AND (111)B SURFACES AND THEIR BEHAVIOR UPON CS ADSORPTION [J].

VANBOMMEL, AJ ;

CROMBEEN, JE ;

VANOIRSCHOT, TGJ .

SURFACE SCIENCE, 1978, 72 (01) :95-108

[10] IMPROVED GAAS SUBSTRATE-TEMPERATURE MEASUREMENT DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

WRIGHT, SL ;

MARKS, RF ;

GOLDBERG, AE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :842-845