DIRECT OBSERVATION OF GAAS ATOMIC LAYER EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引：34

作者：

CHIU, TH

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1244 / 1246

页数：3

共 14 条

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[4] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY [J].

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[5]

DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795

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JOURNAL OF PHYSICAL CHEMISTRY, 1989, 93 (03) :1148-1158

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