GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES

被引：43

作者：

NISHIZAWA, J ^{[1
]}

KURABAYASHI, T ^{[1
]}

ABE, H ^{[1
]}

SAKURAI, N ^{[1
]}

机构：

[1] SEMICOND RES INST,RES DEV CORP JAPAN,NISHIZAWA PERFECT CRYSTAL PROJECT,SENDAI 980,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574567

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1572 / 1577

页数：6

相关论文

共 17 条

[1] STUDY OF ZNTE FILMS GROWN ON GLASS SUBSTRATES USING AN ATOMIC LAYER EVAPORATION METHOD
AHONEN, M
PESSA, M
SUNTOLA, T
[J]. THIN SOLID FILMS, 1980, 65 (03) : 301 - 307
[2] EPITAXIAL GROWTH WITH LIGHT IRRADIATION
KUMAGAWA, M
SUNAMI, H
TERASAKI, T
NISHIZAWA, JI
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) : 1332 - +
[3] REACTION-MECHANISM OF GAAS VAPOR-PHASE EPITAXY
NISHIZAWA, J
SHIMAWAKI, H
SAKUMA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2567 - 2575
[4] PHOTOEXCITATION EFFECTS ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
NISHIZAWA, J
KOKUBUN, Y
SHIMAWAKI, H
KOIKE, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1939 - 1942
[5] RECENT PROGRESS AND POTENTIAL OF SIT
NISHIZAWA, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 3 - 11
[6] MOLECULAR LAYER EPITAXY
NISHIZAWA, J
ABE, H
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200
[7] NISHIZAWA J, 1986, J VAC SCI TECHNOL A, V4, P706, DOI 10.1116/1.573838
[8] NISHIZAWA J, 1974, J CRYST GROWTH, V24, P215, DOI 10.1016/0022-0248(74)90306-6
[9] LAYER GROWTH IN GAAS EPITAXY
NISHIZAWA, J
KIMURA, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 331 - 337
[10] NISHIZAWA J, 1980, C MICROWAVE SOLID ST, P28