RECENT PROGRESS AND POTENTIAL OF SIT

被引:19
作者
NISHIZAWA, J
机构
关键词
D O I
10.7567/JJAPS.19S1.3
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3 / 11
页数:9
相关论文
共 29 条
[1]  
HAYASHI Y, 1974, NATIONAL CONVENTION
[2]  
KANAI Y, 1963, IECE JAPAN, V46, P1252
[3]   CHARACTERISTICS OF STATIC INDUCTION TRANSISTORS - EFFECTS OF SERIES RESISTANCE [J].
MOCHIDA, Y ;
NISHIZAWA, JI ;
OHMI, T ;
GUPTA, RK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) :761-767
[4]  
MOCHIDA Y, 1978, IEEE T ELECTRON DEVI, V25, P766
[5]   SUB-MICRON CHANNEL MOSFETS LOGIC UNDER PUNCHTHROUGH [J].
NAKAMURA, T ;
YAMAMOTO, M ;
ISHIKAWA, H ;
SHINODA, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) :572-577
[6]   STATIC INDUCTION THYRISTOR [J].
NISHIZAWA, J ;
NAKAMURA, K .
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12) :725-728
[7]   CHARACTERISTICS OF NEW THYRISTORS [J].
NISHIZAWA, J ;
NAKAMURA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :541-544
[8]   STATIC INDUCTION TRANSISTOR LOGIC [J].
NISHIZAWA, J .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :231-239
[9]  
NISHIZAWA J, 1977, TR37 RIEC TECHN REP
[10]  
NISHIZAWA J, 1975, IEEE T ELECTRON DEVI, V22, P192